1 to 2 µm III-V Compound Detectors

Gregory H. Olsen

doi:10.1117/12.933598

31 March 1983 1 to 2 µm III-V Compound Detectors

Gregory H. Olsen

Proceedings Volume 0335, Advanced Laser Technology and Applications; (1983) https://doi.org/10.1117/12.933598
Event: 1982 Technical Symposium East, 1982, Arlington, United States

Abstract

Detector structures for the 1-2 µm spectral region are briefly reviewed. Results from VPE InGaAs photodetectors are then described including 100 µm and 500 µm diameter devices for 1.0-1.7 µm, and thin cap 100 µm diameter devices for 0.5-1.7 µm response. High quantum efficiency, low leakage current and high reliability have been observed. Heterostructures for 2-3 µm response are also described.

Citation Download Citation

Gregory H. Olsen "1 to 2 µm III-V Compound Detectors", Proc. SPIE 0335, Advanced Laser Technology and Applications, (31 March 1983); https://doi.org/10.1117/12.933598

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