Printing sub-100-nm random logic patterns using binary masks and synthetic-aperture lithography (SAL)

Torbjoern Sandstrom

doi:10.1117/12.310788

29 June 1998 Printing sub-100-nm random logic patterns using binary masks and synthetic-aperture lithography (SAL)

Torbjoern Sandstrom

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310788
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Synthetic-aperture lithography (SAL) is proposed as a means for reaching design-rules of 0.1 micrometer and below. By a combination of oblique illumination and pupil filtering the relation between high and low spatial frequencies in the image is altered. Simulations indicate that random-logic patterns can be printed at k₁ equals 0.40 with only modest OPC. With some design constraints and/or a corrective auxiliary exposure k₁ equals 0.32 is possible. The main disadvantages are a complex stepper design and low light transmission, the advantages are the use of standard binary masks and good useful resolution.

Citation Download Citation

Torbjoern Sandstrom "Printing sub-100-nm random logic patterns using binary masks and synthetic-aperture lithography (SAL)", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310788

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