New projection optical system for beyond 150-nm patterning with KrF and ArF sources

Shigeru Hirukawa; Koichi Matsumoto; Kengo Takemasa

doi:10.1117/12.310769

29 June 1998 New projection optical system for beyond 150-nm patterning with KrF and ArF sources

Shigeru Hirukawa, Koichi Matsumoto, Kengo Takemasa

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310769
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Two types of new optical system for 150 nm lithography are studied. One is the system with KrF source and high numerical aperture (NA), the other is the system with ArF source. By aerial image simulation, the adequate NA of each projection lens is searched, and the value was 0.68 for KrF source and 0.60 for ArF source. Then the projection lens is fabricated and evaluated. The results are almost same as those of simulation.

Citation Download Citation

Shigeru Hirukawa, Koichi Matsumoto, and Kengo Takemasa "New projection optical system for beyond 150-nm patterning with KrF and ArF sources", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310769

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