Exposure effects on deep-ultraviolet resist thickness

Pary Baluswamy; Thomas R. Glass

doi:10.1117/12.310815

29 June 1998 Exposure effects on deep-ultraviolet resist thickness

Pary Baluswamy, Thomas R. Glass

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310815
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Most deep ultraviolet (DUV) resist models available today utilize the Dill parameters to characterize resist exposure. These models assume that the thickness of the resist remains constant through exposure and post-exposure bake (PEB). The thickness is only affected by development in the models when resist is removed from the exposed or unexposed regions, depending on whether it is a positive or negative resist. It has been observed that a number of DUV resists change thickness upon exposure. This effect is expected to have an impact on the post-exposure acid profile calculated for modeling purposes. In this paper, we present data on the thickness changes for different resists and the effect of exposure to PEB delay on the change.

Citation Download Citation

Pary Baluswamy and Thomas R. Glass "Exposure effects on deep-ultraviolet resist thickness", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310815

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