Relation between film character and wafer alignment: critical alignment issues on HV device for VLSI manufacturing

Yi-Chuan Lo; Chih-Hsiung Lee; Hsun-Peng Lin; Chiou-Shian Peng

doi:10.1117/12.308783

8 June 1998 Relation between film character and wafer alignment: critical alignment issues on HV device for VLSI manufacturing

Yi-Chuan Lo, Chih-Hsiung Lee, Hsun-Peng Lin, Chiou-Shian Peng

Author Affiliations +

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308783
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Several continuous splits for wafer alignment target topography conditions to improve epitaxy film alignment were applied. The alignment evaluation among former layer pad oxide thickness (250 angstrom - 500 angstrom), drive oxide thickness (6000 angstrom - 10000 angstrom), nitride film thickness (600 angstrom - 1500 angstrom), initial oxide etch (fully wet etch, fully dry etch and dry plus wet etch) will be split to this experiment. Also various epitaxy deposition recipe such as: epitaxy source (SiHCl₂ or SiCHCl₃) and growth rate (1.3 micrometer/min approximately 2.0 micrometer/min) will be used to optimize the process window for alignment issue. All the reflectance signal and cross section photography of alignment target during NIKON stepper alignment process will be examined. Experimental results show epitaxy recipe plays an important role to wafer alignment. Low growth rate with good performance conformity epitaxy lead to alignment target avoid washout, pattern shift and distortion. All the results (signal monitor and film character) combined with NIKON's stepper standard laser scanning alignment system will be discussed in this paper.

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Yi-Chuan Lo, Chih-Hsiung Lee, Hsun-Peng Lin, and Chiou-Shian Peng "Relation between film character and wafer alignment: critical alignment issues on HV device for VLSI manufacturing", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308783

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KEYWORDS

Optical alignment

Epitaxy

Etching

Semiconducting wafers

Oxides

Dry etching

Reflectivity

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