Characterization of a chemically amplified photoresist for simulation using a modified "poor man's DRM" methodology

Nickhil H. Jakatdar; Xinhui Niu; Costas J. Spanos

doi:10.1117/12.308770

8 June 1998 Characterization of a chemically amplified photoresist for simulation using a modified "poor man's DRM" methodology

Nickhil H. Jakatdar, Xinhui Niu, Costas J. Spanos

Author Affiliations +

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308770
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

As we enter the DUV lithography generation, the developmental phase of the photolithography process is becoming crucial due to the high costs associated with the lithography equipment. Improvements in the modeling of chemically amplified resists are necessary to extract the maximum possible information from the minimum amount of experimentation. The poor man's dissolution rate monitor (drm) method has been used successfully to extract the post exposure bake (PEB) and develop rate parameters for conventional I-line photoresists and some DUV chemically amplified photoresists (CARs). However, the original method suffers from some drawbacks such as locally optimized results due to the highly non-linear nature of the Mack development model and the need for visual inspection to detect convergence of the rate data. This paper used a simulated annealing optimization engine for global optimization and uses the deprotection induced thickness loss phenomenon for the conversion of dose to m. Post-exposure bake and develop rate parameters have been extracted for Shipley's UV-5 DUV photoresist.

Citation Download Citation

Nickhil H. Jakatdar, Xinhui Niu, and Costas J. Spanos "Characterization of a chemically amplified photoresist for simulation using a modified "poor man's DRM" methodology", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308770

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