Advanced surface inspection techniques for SOI wafers

Mari Nozoe; Aritoshi Sugimoto; Takahide Ikeda

doi:10.1117/12.308756

8 June 1998 Advanced surface inspection techniques for SOI wafers

Mari Nozoe, Aritoshi Sugimoto, Takahide Ikeda

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308756
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

In this paper, it is described that (1) Various type of SOI wafers have each optimum laser illumination mode, (2) Using this optimum laser illumination, 0.1 - 0.3 micrometer particle detection sensitivity has been achieved. (3) By measuring the noise element of scattered light from SOI surface, failure mode can be determined. The performance of the particle detection for each type of wafer and the result of surface roughness failure is also discussed.

Citation Download Citation

Mari Nozoe, Aritoshi Sugimoto, and Takahide Ikeda "Advanced surface inspection techniques for SOI wafers", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308756

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