Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writing

Takeo Nagata; Yasuo Manabe; Yasuo Nara; Nobuo Sasaki; Yasuhide Machida

doi:10.1117/12.309587

5 June 1998 Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writing

Takeo Nagata, Yasuo Manabe, Yasuo Nara, Nobuo Sasaki, Yasuhide Machida

Author Affiliations +

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309587
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

In order to obtain highly accurate patterns for 0.13micrometers design rule and below by electron beam exposure system with high throughput, it is necessary to use block exposure system and to correct proximity effect. We have developed proximity effect correction system for block exposure system using supplementary exposure method. By using this system, line width difference for pattern area density from 5 percent to 40 percent decreased from 70nm to 15nm in 0.13 micrometers line and space patterns. Line width difference between the proximate and isolated region also decreased from 70nm to 20nm. Necessity of proximity effect correction considering coulomb interaction effect is also pointed out.

Citation Download Citation

Takeo Nagata, Yasuo Manabe, Yasuo Nara, Nobuo Sasaki, and Yasuhide Machida "Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writing", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309587

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