Paper
5 June 1998 Equivalent modeling of SCALPEL mask membrane distortions
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Abstract
Considering semiconductor industry projections, sub-0.10 micrometers technology will most likely require a new advanced lithography. Scattering with Angular Limitation Projection Electron-beam Lithography (SCALPEL) is one such lithography being developed to meet this need. As with all lithographies, successful implementation of the SCALPEL technique is dependent upon the development of a low- distortion mask; distortions lead to pattern placement errors on the integrated circuit. Therefore, finite element (FE) models have been developed in order to quantify and minimize mask membrane distortions. The support grillage, i.e., the struts, in the pattern area on a SCALPEL mask require a large number of elements to determine mechanical displacements of the mask membrane. The element density becomes computationally expensive and may exceed the computer hardware limitations. Therefore, an equivalent modeling technique has been developed to reduce the number of elements required to simulate the behavior of the mask, thereby reducing computation time and remaining within the computer hardware limitations.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerald A. Dicks, Roxann L. Engelstad, Edward G. Lovell, and James Alexander Liddle "Equivalent modeling of SCALPEL mask membrane distortions", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309623
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KEYWORDS
Photomasks

Charged-particle lithography

Semiconducting wafers

Lithography

Silicon

Computer hardware

Solids

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