Integrated photonic devices by selective-area MOCVD

Mark L. Osowski; James J. Coleman

doi:10.1117/12.298236

22 December 1997 Integrated photonic devices by selective-area MOCVD

Mark L. Osowski, James J. Coleman

Proceedings Volume 3290, Optoelectronic Integrated Circuits II; (1997) https://doi.org/10.1117/12.298236
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Progress towards integrated photonic devices by three-step selective-area MOCVD is reviewed. Using the selective growth process, the quantum well thickness and, hence, the emission wavelength of buried heterostructure devices can be defined anywhere on a wafer surface by using an appropriate mask geometry for the active region regrowth. This in-plane bandgap energy control allows the designer to fabricate devices with different wavelengths on the same wafer for integrated photonic applications. Since no growth occurs on the oxide mask, the spacing between stripes defines the width of the lateral waveguide, and the width of the stripes defines the amount of growth rate and composition enhancement in the quantum well. As a result, a very wide range of emission wavelengths (960 - 1060 nm) can be obtained over the wafer surface in a single growth. This paper reviews a few of the high performance photonic devices fabricated using this method.

Citation Download Citation

Mark L. Osowski and James J. Coleman "Integrated photonic devices by selective-area MOCVD", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); https://doi.org/10.1117/12.298236

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