Paper
20 April 1998 Vertical-cavity surface-emitting lasers fabricated using a sealing of AlAs against wet oxidation
Dae-Ho Lim, Gye Mo Yang, Jong Hee Kim, Kee Young Lim, Hyung Jae Lee
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Abstract
We have studied the process of sealing on exposed. AlAs and the wet oxidation behavior of AlAs to prevent further wet oxidation. A critical processing step consists of the formation of an oxide surface barrier by the first set oxidation for a short time at 390-430 degrees C in the stream environment of previously room-ambient exposed AlAs surface. During this brief wet oxidation,a dense oxide barrier with a thickness of approximately 1 micrometers is formed, which further blocks diffusing oxygen species during the second wet oxidation. The oxide surface barriers of approximately 1 micrometers thickness formed at 408 degrees C and 410 degrees C have shown the best effectiveness of sealing against further wet oxidation. The effectiveness of the sealing is demonstrated through its use as a mask against wet oxidation in the fabrication of oxide-confirmed vertical-cavity surface-emitting lasers.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dae-Ho Lim, Gye Mo Yang, Jong Hee Kim, Kee Young Lim, and Hyung Jae Lee "Vertical-cavity surface-emitting lasers fabricated using a sealing of AlAs against wet oxidation", Proc. SPIE 3286, Vertical-Cavity Surface-Emitting Lasers II, (20 April 1998); https://doi.org/10.1117/12.305450
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KEYWORDS
Oxidation

Oxides

Vertical cavity surface emitting lasers

Semiconducting wafers

Gallium arsenide

Oxygen

Photomasks

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