Paper
12 January 1998 Visible electroluminescence from pulsed-laser-annealed a-Si:H/a-SiNx:H superlattices on silicon wafer
Mingxiang Wang, Xinfan Huang, Wei Li, Jun Xu, Kun-Ji Chen, Qimin Wang
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Abstract
Plasma enhanced chemical vapor deposited a-Si:H/a-SINx:H superlattices on silicon wafers were annealed by KrF excimer pulsed laser. Room temperature visible electroluminescence (EL) was successfully realized from these silicon-based superlattices structures with quite low threshold biased value 3.0V. It is a promising new way, in which all procedures are compatible with current silicon ULSI technology, to the realization of opto-electronic devices different from the porous silicon. Luminescent properties of samples with different laser annealing energy densities were compared and a preferred annealing condition was given.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mingxiang Wang, Xinfan Huang, Wei Li, Jun Xu, Kun-Ji Chen, and Qimin Wang "Visible electroluminescence from pulsed-laser-annealed a-Si:H/a-SiNx:H superlattices on silicon wafer", Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); https://doi.org/10.1117/12.298218
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KEYWORDS
Electroluminescence

Silicon

Annealing

Semiconducting wafers

Laser sintering

Superlattices

Crystals

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