Paper
11 September 1997 Quick kill passivation integrity study
Karl Huber, Simon Gonzales
Author Affiliations +
Abstract
This passivation integrity study was initiated as part of a submicron integration development program. New processes were developed which reflect a shrink in the device geometry's and significant changes in processes and equipment used. An immediate concern was the effect of these changes on the passivation integrity. To investigate these effects a series of passivation integrity tests were performed. Passivation failures were quantified via optical inspection and failure sources were identified by SEM analysis. The majority of the tests were performed on short flow processes (i.e. backend process flows consisting of 2 and 3 layer metal patterned structures). Full flow processes (integrated frontend and backend processes) were investigated on BiCMOS and CMOS technologies.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl Huber and Simon Gonzales "Quick kill passivation integrity study", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); https://doi.org/10.1117/12.284702
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Metals

Polysomnography

Etching

Tin

Reactive ion etching

Composites

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