Investigations of mechanical stress and electromigration in an aluminum meander structure

Xiaoying Yu; Kirsten Weide

doi:10.1117/12.284698

11 September 1997 Mechanical stress and electromigration in an aluminum meander structure

Xiaoying Yu, Kirsten Weide

Proceedings Volume 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III; (1997) https://doi.org/10.1117/12.284698
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

For reliability prediction in metallization structures the different migration mechanisms like electro-thermo- and stressmigration (due to mismatch of thermal expansion and elastic moduli) become more and more important. With numerical methods like the fmite element methode FEM, it is possible to determine the weakest part ofa metallization structure. In this paper the mechanical stress distribution as well as the mass flux and mass flux divergence due to electrical, mechanical and thermal effects will be investigated and correlated with measurements. In the investigations an unpassivated aluminum-meander test structure was used. For the aluminum meander structure the current density, temperature gradients and mechanical stress distributions were determined by fmite element simulations with the FEM-program ANSYS. The resistivity as well as the activation energy was determined by measurements. Based on the results ofthe simulations the mass flux due to mechanical stress were calculated and compared with the calculated electro- and thermomigration mass flux.

Citation Download Citation

Xiaoying Yu and Kirsten Weide "Mechanical stress and electromigration in an aluminum meander structure", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); https://doi.org/10.1117/12.284698

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