Paper
11 September 1997 Defect cluster analysis to detect equipment-specific yield loss based on yield-to-area calculations
Christopher Hess, Larg H. Weiland
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Abstract
Defect parameter extraction plays an important role in process control and yield prediction. A methodology of evaluating wafer level defect clustering will be presented to detect equipment specific particle contamination. For that, imaginary wafermaps of a variety of different chip areas are generated to calculate a yield-to-area dependency. Based on these calculations a Micro Density Distribution (MDD) will be determined for each wafer. The range and course of the MDD may indicate specific failures of equipment tools.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Hess and Larg H. Weiland "Defect cluster analysis to detect equipment-specific yield loss based on yield-to-area calculations", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); https://doi.org/10.1117/12.284694
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CITATIONS
Cited by 5 patents.
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KEYWORDS
Semiconducting wafers

Defect detection

Wafer-level optics

Process control

Particles

Laser scattering

Manufacturing

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