Wafer-scale modeling of pattern effect in oxide chemical mechanical polishing

Dennis O. Ouma; Brian Stine; Rajesh Divecha; Duane S. Boning; James E. Chung; Gregory B. Shinn; Iqbal Ali; John Clark

doi:10.1117/12.284597

27 August 1997 Wafer-scale modeling of pattern effect in oxide chemical mechanical polishing

Dennis O. Ouma, Brian Stine, Rajesh Divecha, Duane S. Boning, James E. Chung, Gregory B. Shinn, Iqbal Ali, John Clark

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284597
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Dielectric film thickness variation arising from layout pattern dependency remains a major concern in oxide CMP. The severity of the pattern density effect is a function of the die location on the wafer, thus a combined wafer/die pattern dependent polishing model is required to fully assess the effectiveness of the process for a given planarization requirement. In this work, a two stage modeling methodology which accounts for both wafer-scale variation and within-die pattern dependencies, as well as their interaction, is developed. The effectiveness of the methodology is demonstrated over a range of polishing process conditions and consumable choices. We find that the integrated wafer/die CMP model accurately predicts the resulting increase or decrease in die-level pattern dependencies as a function of die position on the wafer.

Citation Download Citation

Dennis O. Ouma, Brian Stine, Rajesh Divecha, Duane S. Boning, James E. Chung, Gregory B. Shinn, Iqbal Ali, and John Clark "Wafer-scale modeling of pattern effect in oxide chemical mechanical polishing", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284597

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