Peculiarities of radiative recombination in Vanadium-doped CdTe crystals

Alexander E. Belyaev; V. Yu. Ivanov; Sergiy Mikhailovich Komirenko; S. V. Kavertsev; L. A. Mischenko

doi:10.1117/12.280443

26 August 1997 Peculiarities of radiative recombination in Vanadium-doped CdTe crystals

Alexander E. Belyaev, V. Yu. Ivanov, Sergiy Mikhailovich Komirenko, S. V. Kavertsev, L. A. Mischenko

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280443
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Optical and photoelectrical properties of both as-grown and annealed at 600 C during five hours CdTe:V crystals with Vanadium concentration in liquid phase of 5 X 10¹⁸cm^-3 and 5 X¹⁹cm^-3 were investigated. Presented data are based on investigation of photoluminescence (PL) spectra and spectral dependence of photoconductivity (PC). The effect of PL band kindling has been detected with maximum at 1.55 eV in crystals of N_v equals 5 X 10¹⁸ cm^-3 doping concentration. The effect is accompanied by dramatic increase of crystals' resistance. As mechanism responsible for formation of high- resistance state the self-compensation of the impurities with creation of complexes that include isolated Vanadium and vacancy in the metal sublattice is considered.

Citation Download Citation

Alexander E. Belyaev, V. Yu. Ivanov, Sergiy Mikhailovich Komirenko, S. V. Kavertsev, and L. A. Mischenko "Peculiarities of radiative recombination in Vanadium-doped CdTe crystals", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280443

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