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26 August 1997 Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures
E. V. Bogdanov, Ole Per Hansen, Konstantin I. Kolokolov, V. N. Kravchenko, N. Ya. Minina, J. S. Olsen, A. M. Savin
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Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280471
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
The influence of light illumination and high electric field pulses on the long-term relaxation effect in piezoresistivity which has been discovered recently in p- GaAs/Al0.5Ga0.5As heterostructures has ben investigated. Significant acceleration of relaxation processes has been observed under the carriers heating by different external sources. This means that these phenomena are mostly determined by nonequilibrium processes in electron system. At 4.2 K under high electric fields switching of the samples to long-term high-resistance state has ben also found.
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E. V. Bogdanov, Ole Per Hansen, Konstantin I. Kolokolov, V. N. Kravchenko, N. Ya. Minina, J. S. Olsen, and A. M. Savin "Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280471
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KEYWORDS
Heterojunctions
Gallium
Switching
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