Band structure engineering of InAs for improved electron transport characteristics

W. Ted Masselink

doi:10.1117/12.280424

26 August 1997 Band structure engineering of InAs for improved electron transport characteristics

W. Ted Masselink

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280424
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The performance of electronic devices such as field-effect or bipolar transistors is determined by extrinsic factors such as wiring, intrinsic technology such as metalization and contact resistance, transit lengths, and capacitances, and by transport characteristics of the material itself. The electronic transport characteristics are in turn largely determined by the electronic bandstructure. This bandstructure can be altered or engineered through the use of strain and quantum size effects in artificially structured heterostructures, allowing improvements in device performance.

Citation Download Citation

W. Ted Masselink "Band structure engineering of InAs for improved electron transport characteristics", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280424

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