Paper
13 June 1997 Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBE
Waclaw Bala, Grzegorz Glowacki, Adam Gapinski
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276213
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
This works focuses on the study of optical properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on n-type (001) GaAs substrates. Luminescence, reflectivity and Raman spectroscopy are studied. Photoluminescence spectra of the samples are dominated by blue emission bands, which can be associated with radiative recombination of free excitons. The reflectivity spectra were used to investigate the refractive index value and the thickness of the layers. Moreover the temperature dependence of the band-gap energy of ZnxMg1-xSe epilayers was determined. Using Raman spectroscopy we can obtain information about two kinds of longitudinal optical phonon modes observed at room temperature, whose frequencies and intensities depend characteristically on Mg content.
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Waclaw Bala, Grzegorz Glowacki, and Adam Gapinski "Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBE", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276213
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KEYWORDS
Magnesium

Gallium arsenide

Raman spectroscopy

Luminescence

Phonons

Refractive index

Optical properties

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