Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs

B. Loncierz; Marian Nowak

doi:10.1117/12.276215

13 June 1997 Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs

B. Loncierz, Marian Nowak

Author Affiliations +

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276215
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

Recently reported contactless photoelectromagnetic (PEM) method of determining carrier lifetime was used for the first time to measure carrier lifetimes in variously doped GaAs:Te, GaAs:Si as well as in multiquantum well structure grown on GaAs substrate. This method uses the dependence of PEM magnetic flux evoked in AC illuminated sample on frequency of chopping of the illumination intensity. In the presented experiments the samples were illuminated with radiation of different intensities and wavelengths emitted by diode lasers. The simple inspection of semiconductor wafer for laboratory and industrial purposes.

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B. Loncierz and Marian Nowak "Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276215

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