Determination of the trap depth by analysis of the thermoluminescence peak shape

T. Lukas; A. Opanowicz

doi:10.1117/12.276245

13 June 1997 Determination of the trap depth by analysis of the thermoluminescence peak shape

T. Lukas, A. Opanowicz

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276245
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

The peak methods of Chen for the trap depth determination are applied to numerically calculated thermoluminescence curves of an insulator crystal. It turned out that the methods yield correct values of the trap depth except for the case of strong retrapping.

Citation Download Citation

T. Lukas and A. Opanowicz "Determination of the trap depth by analysis of the thermoluminescence peak shape", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276245

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