Paper
23 October 1997 84-GHz source generated from a mode-locked semiconductor-laser-pumped HEMT
Kalin Spariosu, Vladimir A. Manasson, Lev S. Sadovnik, Robert M. Mino, Dipen Bhattacharya, Mohammed Ershad Ali, Harold R. Fetterman
Author Affiliations +
Abstract
The generation of 84 GHz radiation was demonstrated using a mode-locked semiconductor laser (MLSL) pumped heterojunction bipolar transistor (HBT). The passively mode-locked MLSL was biased appropriately utilizing two diode laser drivers (current sources). Mode-locked behavior was achieved in a colliding pulse mode, resulting in a pulse repetition rate frequency of approximately equals 84 GHz. The mode-locked behavior was confirmed by utilizing both an interferometer-based correlation measurement and an optical spectrum analyzer. The MLSLO was then used to pump an HBT that was specially designed for optical pumping (a 10 mm X 10 mm window was fabricated in the HBT), allowing efficient optical excitation of the device. HBT-radiated MMW signals as high as 20 dB (above the noise floor) were achieved at approximately equals 84 GHz.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kalin Spariosu, Vladimir A. Manasson, Lev S. Sadovnik, Robert M. Mino, Dipen Bhattacharya, Mohammed Ershad Ali, and Harold R. Fetterman "84-GHz source generated from a mode-locked semiconductor-laser-pumped HEMT", Proc. SPIE 3160, Optical Technology for Microwave Applications VIII, (23 October 1997); https://doi.org/10.1117/12.283936
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mode locking

Extremely high frequency

Semiconductor lasers

Fringe analysis

Mirrors

Modulation

Field effect transistors

Back to Top