Vapor crystal growth of CdTe under terrestrial and microgravity conditions

Klaus-Werner Benz; M. Laasch; T. Kunz; Michael Fiederle; Wolfgang Joerger

doi:10.1117/12.277706

7 July 1997 Vapor crystal growth of CdTe under terrestrial and microgravity conditions

Klaus-Werner Benz, M. Laasch, T. Kunz, Michael Fiederle, Wolfgang Joerger

Proceedings Volume 3123, Materials Research in Low Gravity; (1997) https://doi.org/10.1117/12.277706
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

CdTe:Cl crystals were successfully grown in a closed vapor transport system under terrestrial and microgravity conditions within the framework of the EURECA-1 mission. The axial as well as radial resistivity distribution differs strongly in 1 g and (mu) g crystals. This is assumed to be due to different vapor transport of major components and dopants and different dopant segregation. For CdTe crystal growth in closed systems, the partial pressures depend sensitively on the composition of the feed material and its pretreatment. This affects the reproducibility of vapor transport: Smallest deviations from the congruently subliming composition yield significant changes in the p_Cd/p_Te(2) ratio and transport-limiting diffusion barriers. Therefore, vapor pressure control by means of a semi-closed growth system is proposed for CdTe vapor transport experiments in microgravity. In ground-based experiments, CdTe crystals were grown in the semi-closed system applying Cl, Ga and V as dopants. The conditions for reproducible transport are discussed. Results of electrical material characterization are presented.

Citation Download Citation

Klaus-Werner Benz, M. Laasch, T. Kunz, Michael Fiederle, and Wolfgang Joerger "Vapor crystal growth of CdTe under terrestrial and microgravity conditions", Proc. SPIE 3123, Materials Research in Low Gravity, (7 July 1997); https://doi.org/10.1117/12.277706

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