Integrating 128-Element Linear Imager For The 1 To 5µm Region

Gary C. Bailey

doi:10.1117/12.932798

30 June 1982 Integrating 128-Element Linear Imager For The 1 To 5µm Region

Gary C. Bailey

Proceedings Volume 0311, Mosaic Focal Plane Methodologies II; (1982) https://doi.org/10.1117/12.932798
Event: 25th Annual Technical Symposium, 1981, San Diego, United States

Abstract

Useful charge integration has been achieved in high quality photovoltaic InSb diodes when combined with a field effect transistor (FET) multiplexing (MUX) scheme. An experimental detector assembly with a linear array of 128 InSb diodes coupled to a FET MUX has been developed. The first stage J-FET preamp, pixel reset switch, MUX, and the InSb array are contained in a hybrid microcircuit of compact dimensions (1-3/4" by 1" by 1/8"). A low noise preamplifier topology which capitalizes on the low video line capacitance inherent with hybrid fabrication techniques is also utilized. Measurements indicate a signal-to-noise of over 1000:1 and response uniformity of +2 percent. Sample images show subtle detail which supports the estimated radiometric sensitivity of 0.01Ã‚Â°K NEAt.

Citation Download Citation

Gary C. Bailey "Integrating 128-Element Linear Imager For The 1 To 5µm Region", Proc. SPIE 0311, Mosaic Focal Plane Methodologies II, (30 June 1982); https://doi.org/10.1117/12.932798

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