Tunnel noise spectroscopy by reflection SNOM and STM

Pavel Tomanek; Lubomir Grmela; Jitka Bruestlova; Pavel Dobis

doi:10.1117/12.281197

17 September 1997 Tunnel noise spectroscopy by reflection SNOM and STM

Pavel Tomanek, Lubomir Grmela, Jitka Bruestlova, Pavel Dobis

Proceedings Volume 3098, Optical Inspection and Micromeasurements II; (1997) https://doi.org/10.1117/12.281197
Event: Lasers and Optics in Manufacturing III, 1997, Munich, Germany

Abstract

The 1/f noise is a general phenomenon on physical systems. In this paper low-frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called 'tunnel noise spectroscopy' permitting to localize a noise sources on the surface. Some applications of scanning tunnel microscopy and of reflection scanning near-field optical microscopy in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

Citation Download Citation

Pavel Tomanek, Lubomir Grmela, Jitka Bruestlova, and Pavel Dobis "Tunnel noise spectroscopy by reflection SNOM and STM", Proc. SPIE 3098, Optical Inspection and Micromeasurements II, (17 September 1997); https://doi.org/10.1117/12.281197

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