Fabrication of submicron topology with ion- and neutral-beam etching

Ilja P. Soshnikov; Alexander V. Lunev; M. E. Gaevski; Lolita G. Rotkina; Nicolai A. Bert

doi:10.1117/12.275806

7 July 1997 Fabrication of submicron topology with ion- and neutral-beam etching

Ilja P. Soshnikov, Alexander V. Lunev, M. E. Gaevski, Lolita G. Rotkina, Nicolai A. Bert

Proceedings Volume 3048, Emerging Lithographic Technologies; (1997) https://doi.org/10.1117/12.275806
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Recently the microelectronics devices fabricated on the basis of the topological structures with conic or point elements are applied widely. The traditional method of formation of the structures using an electron beam lithography, a chemical or ion beam (plasma) etching has some disadvantages. For example, the chemical etching of the submicron elements has rather low reproducibility of the geometry profile. It is clearly displayed in the formation of relief in the mesa of the submicron size. The electronic lithography and the polishing ion etching method of the cone formation is complicated due to the problem with the stability of the masking material and the resolution. What is more important the problem of the compatibility with other technological operations of the microelectronics fabrication. The authors offer the simple and reproducible method of fabrication of the submicron structure of a cone type. It bases on the formation of the surface relief by the neutral projectiles sputtering. The present paper reports the possibility of the cone relief fabrication on the wide surface and in the narrow submicron mesa by the argon neutral bombardment.

Citation Download Citation

Ilja P. Soshnikov, Alexander V. Lunev, M. E. Gaevski, Lolita G. Rotkina, and Nicolai A. Bert "Fabrication of submicron topology with ion- and neutral-beam etching", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275806

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