Polysilicon TFTs for AMLCD applications with gate oxides grown in a low-temperature N2O plasma

Robert S. Howell; Sita R. Kaluri; Miltiadis K. Hatalis; Dennis W. Hess

doi:10.1117/12.270293

10 April 1997 Polysilicon TFTs for AMLCD applications with gate oxides grown in a low-temperature N₂O plasma

Robert S. Howell, Sita R. Kaluri, Miltiadis K. Hatalis, Dennis W. Hess

Proceedings Volume 3014, Active Matrix Liquid Crystal Displays Technology and Applications; (1997) https://doi.org/10.1117/12.270293
Event: Electronic Imaging '97, 1997, San Jose, CA, United States

Abstract

It has been reported that single crystal silicon transistors whose gate oxides were grown in N₂O or treated to a post oxidation anneal in N₂O demonstrated better resiliency under electrical stress. However, normal oxidation in single crystal silicon processing to form gate oxides is incompatible with the low temperature processes required for polysilicon TFTs designed for AMLCDs. In this work, we have used our previously reported process for a double layer gate oxidation, the bottom layer being a grown oxide formed in a low temperature, high density oxygen plasma and the top layer being a deposited oxide, to build the first low temperature polysilicon TFTs with a nitrogen passivated oxide/polysilicon interface. Our devices were constructed with the bottom 10 nm layer of gate oxide being grown in either an N₂O or an O₂ plasma, followed by a deposition of 100 nm of SiO₂ by PECVD. The devices were then subjected to prolonged periods of stress at V_ds equals V_gs equals 20 V. While having similar pre-stress device characteristics, the devices made with the oxide grown in the N₂O plasma demonstrated a greater degree of stability than those with an oxide grown in an oxide grown in an O₂ plasma.

Citation Download Citation

Robert S. Howell, Sita R. Kaluri, Miltiadis K. Hatalis, and Dennis W. Hess "Polysilicon TFTs for AMLCD applications with gate oxides grown in a low-temperature N₂O plasma", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); https://doi.org/10.1117/12.270293

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