Paper
22 January 1997 GaAs/AlGaAs traveling-wave electro-optic modulators
Ralph Spickermann, Steve Sakamoto, Nadir Dagli
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Abstract
A GaAs/AlGaAs traveling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers. Using appropriate electrode engineering velocity matching with matched impedance and low microwave loss was achieved. Device had a measured electrical bandwidth greater than 40 GHz at 1.55 micrometer. The measured bandwidth at 1.3 micrometer was 37 GHz. The mechanism limiting the bandwidth was identified as phase velocity matching rather than group velocity matching.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralph Spickermann, Steve Sakamoto, and Nadir Dagli "GaAs/AlGaAs traveling-wave electro-optic modulators", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264228
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CITATIONS
Cited by 10 scholarly publications and 1 patent.
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KEYWORDS
Electrodes

Microwave radiation

Phase velocity

Modulators

Modulation

Electrooptic modulators

Gallium arsenide

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