Paper
4 April 1997 64-Gbit/s GaAs integrated DANE receiver/laser driver
Wei-Heng Chang, Jinghui Mu, Mitchell D. Heins, Milton Feng, Jongwoo Kim, David S. McCallum, Richard V. Stone, Peter S. Guilfoyle
Author Affiliations +
Abstract
Optical interconnects provide wide bandwidth, lowloss, and high fanout as compared to those for traditional electrical interconnects. In the past years many high performance optoelectronic circuits have been demonstrated. However, most of them require complicated process and exotic devices. To make optical interconnects in real system and commercial use, circuits utilizing manufacturable, robust, and low-cost technology have to be realized. Ion implanted GaAs MESFETs provide great promise due to their simplicity in manufacturing and their high speed performance. The optical characteristics of GaAs materials also make this technology favorable in realizing low-cost, high-performance OEICs.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei-Heng Chang, Jinghui Mu, Mitchell D. Heins, Milton Feng, Jongwoo Kim, David S. McCallum, Richard V. Stone, and Peter S. Guilfoyle "64-Gbit/s GaAs integrated DANE receiver/laser driver", Proc. SPIE 3005, Optoelectronic Interconnects and Packaging IV, (4 April 1997); https://doi.org/10.1117/12.271104
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KEYWORDS
Semiconductor lasers

Optical amplifiers

Power supplies

Receivers

Vertical cavity surface emitting lasers

Picosecond phenomena

Modulation

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