Accurate flux estimation during molecular-beam epitaxy growth of vertical-cavity surface-emitting lasers

Laurent Couturier; Philippe Grosse; Anna Grouillet; Andre L. Chenevas-Paule

doi:10.1117/12.271071

4 April 1997 Accurate flux estimation during molecular-beam epitaxy growth of vertical-cavity surface-emitting lasers

Laurent Couturier, Philippe Grosse, Anna Grouillet, Andre L. Chenevas-Paule

Proceedings Volume 3003, Vertical-Cavity Surface-Emitting Lasers; (1997) https://doi.org/10.1117/12.271071
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We report an in-situ method for accurate flux monitoring in gas-source molecular-beam epitaxy (GSMBE) growth of vertical-cavity surface-emitting lasers (VCSELs). The values of the effusion cell fluxes are determined using a single reflectivity spectrum made on the incomplete structure. The flux values used for the growth of the first part of the device are extracted from the reflectivity spectrum using a simulated annealing algorithm. The knowledge of the flux values allows us to calculate the thickness and the composition of the layers used for the growth of the first part of the device. Before completing the structure, corrections are made on the last part of the device in order to adjust the cavity resonance wavelength of the final device at the desired wavelength. Using this method we have obtained a cavity resonance wavelength controlled to 0.15%.

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Laurent Couturier, Philippe Grosse, Anna Grouillet, and Andre L. Chenevas-Paule "Accurate flux estimation during molecular-beam epitaxy growth of vertical-cavity surface-emitting lasers", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271071

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KEYWORDS

Vertical cavity surface emitting lasers

Mirrors

Algorithms

Reflectivity

Absorption

Aluminum

Epitaxy

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