Pulsed electrochemical etching of InGaN/GaN LED material

Jeong Seok O; Peter S. Zory; David P. Bour

doi:10.1117/12.271037

4 April 1997 Pulsed electrochemical etching of InGaN/GaN LED material

Jeong Seok O, Peter S. Zory, David P. Bour

Proceedings Volume 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications; (1997) https://doi.org/10.1117/12.271037
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A pulsed electrochemical technique for etching MOCVD-grown InGaN/GaN light-emitting diode material at room temperature is reported. The p-GaN and InGaN layers can be etched away in minutes providing access to the n-GaN layer below. Movement of the etch front through the p-n junction region can be observed by monitoring changes in the current pulse shape with time on an oscilloscope.

Citation Download Citation

Jeong Seok O, Peter S. Zory, and David P. Bour "Pulsed electrochemical etching of InGaN/GaN LED material", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); https://doi.org/10.1117/12.271037

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