Monolithic OEICs using GaAs VLSI technology

Joseph F. Ahadian; Steven G. Patterson; Praveen T. Vaidyanathan; Yakov Royter; Daniel E. Mull; Gale S. Petrich; William T. Goodhue; Sheila Prasad; Leslie A. Kolodziejski; Clifton G. Fonstad Jr.

doi:10.1117/12.271045

4 April 1997 Monolithic OEICs using GaAs VLSI technology

Joseph F. Ahadian, Steven G. Patterson, Praveen T. Vaidyanathan, Yakov Royter, Daniel E. Mull, Gale S. Petrich, William T. Goodhue, Sheila Prasad, Leslie A. Kolodziejski, Clifton G. Fonstad Jr.

Author Affiliations +

Proceedings Volume 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications; (1997) https://doi.org/10.1117/12.271045
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Optical interconnects for use in high speed computing and communication systems require dense optoelectronic integrated circuits (OEICs). Monolithic integration of III-V optoelectronics with VLSI optoelectronics with VLSI- complexity electronics will yield OEICs of the high density, performance, manufacturability, and reliability. The epitaxy-on-electronics (EoE) technique monolithically integrates optoelectronic devices with commercially- fabricated, fully-metallized GaAs VLSI integrated circuits. This manuscript reviews the EoE process and details the fabrication of integrated LEDs. This LED-OEIC process is being used by optical interconnect systems researchers on a prototype basis through the OPTOCHIP project: the current status of this effort is reviewed.

Citation Download Citation

Joseph F. Ahadian, Steven G. Patterson, Praveen T. Vaidyanathan, Yakov Royter, Daniel E. Mull, Gale S. Petrich, William T. Goodhue, Sheila Prasad, Leslie A. Kolodziejski, and Clifton G. Fonstad Jr. "Monolithic OEICs using GaAs VLSI technology", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); https://doi.org/10.1117/12.271045

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