Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts

Peter W. Epperlein

doi:10.1117/12.273793

2 May 1997 Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts

Peter W. Epperlein

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273793
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

This paper reviews extensive Raman scattering, reflectance modulation and luminescence microprobe measurements made on GaInP/AlGaInP, GaAs/AlGaAs and InGaAs/AlGaAs ridge quantum well lasers to investigate (1) laser operating temperatures, (2) built-in mechanical stress, (3) atomic disorder in mirror facets, (4) Si recrystallization effects in mirror coatings, and (5) correlations of these parameters with laser performance and reliability data.

Citation Download Citation

Peter W. Epperlein "Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273793

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available