Paper
6 June 1997 Gain spectra and optical transition probability in doped quantum well heterostructures
Alexander A. Afonenko, Valerii K. Kononenko, Ivan S. Manak
Author Affiliations +
Abstract
In the work we investigated the influence of the dimensional quantization on the probability of optical transitions with no k-selection rule. It is shown that calculations of the recombination rate and gain coefficient will be inaccurate if they are performed with using the probability of optical transitions determined for bulk semiconductors. Successive examination of radiative transitions with no the k-selection rule leads to a qualitative coincidence of the dependence of the spontaneous recombination rate on the quantum well width with the results obtained in the model of direct transitions.With the suppression of the constant injection efficiency the inversion current value is practically independent of the quantum-well layer thickness. Various approaches for the calculation of the spontaneous recombination rate are discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander A. Afonenko, Valerii K. Kononenko, and Ivan S. Manak "Gain spectra and optical transition probability in doped quantum well heterostructures", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275633
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KEYWORDS
Quantum wells

Electrons

Heterojunctions

Probability theory

Quantization

Semiconductors

Laser damage threshold

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