Effect of low-dose x-irradiation on light-emitting diodes Au-ZnS

B. Pavlyk; B. Tsybulyak; Ya. Horyn'; M. Belov

doi:10.1117/12.266826

6 February 1997 Effect of low-dose x-irradiation on light-emitting diodes Au-ZnS

B. Pavlyk, B. Tsybulyak, Ya. Horyn', M. Belov

Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266826
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

The influence of low-dose (up to 10 Cl/kg) underthreshold X- irradiation (Cu K_alpha, 20 - 40 kV, 20-40 mA) on physical parameters of surface-barrier diode structures Au- ZnS has been investigated. Barrier contacts have been fabricated by means of thermal deposition of Au in vacuum approximately 10^-6 mm Hg on the chemical etched surface of ZnS(Al) single crystals. Ohmic contacts where made of In+10%Cd-alloy. I-V, C-V and G-V plots have been measured. Spectrum and kinetic parameters of deep levels (DL) in the forbidden band were studied by means of modulation capacitance spectroscopy (MCS). X-irradiation causes the decrease of shallow donor traps concentration in near-surface region of ZnS and the decrease of surface state (SS) effective density N_SS in Au-ZnS contact. The radiation-stimulated changes in contact cannot be removed by the annealing. It has been stated that donor trap concentration and N_SS reaches the saturation at exposure doses higher, than 3 Cl/kg. Creation of any new DLs in ZnS forbidden band has not been observed within the limits of the exposure doses investigated. The changes of the DL kinetic parameters and their profiles after irradiation can be explained by the radiation-stimulated decrease of N_SS.

Citation Download Citation

B. Pavlyk, B. Tsybulyak, Ya. Horyn', and M. Belov "Effect of low-dose x-irradiation on light-emitting diodes Au-ZnS", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); https://doi.org/10.1117/12.266826

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