Exposure of the OCG895i resist at the visible 413-nm Kr-ion line in a laser maskwriter

Torbjoern Sandstrom; Peter Henriksson

doi:10.1117/12.262845

27 December 1996 Exposure of the OCG895i resist at the visible 413-nm Kr-ion line in a laser maskwriter

Torbjoern Sandstrom, Peter Henriksson

Proceedings Volume 2884, 16th Annual BACUS Symposium on Photomask Technology and Management; (1996) https://doi.org/10.1117/12.262845
Event: 16th Annual BACUS Symposium on Photomask Technology and Management, 1996, Redwood City, CA, United States

Abstract

Can the i-line resist OCG895i, normally exposed with UV radiation from an i-line (365 nm) mercury discharge or an argonion laser (364 nm), be exposed with the visible 407 and 413 nm lines of the krypton-ion laser. If so, with what quality? Visible radiation is desirable since it simplifies the optical design, and makes the system more reliable and easily serviceable. Simulations with PROLITH/2 show the lithographic performance to be equal or even slightly better at the longer wavelengths. Optical theory gives that at equal resolution there is a marginal loss in depth of focus (12%) at 413 compared to 364 nm. However, this is compensated for by the better optical design of the optical system —in particular the better corrected field curvature — made possible by the much wider range of glasses available in the visible. In a practical context there results no resolution penalty from using 413 nm exposure. Experimental reticle exposures with 413 nm and NA = 0.42 using a large-area writer for micro-tip FED lX masks confirm the viability of the 895i in the visible. Furthermore, the good image decay properties at 364 nm are retained at 413 nm.

Citation Download Citation

Torbjoern Sandstrom and Peter Henriksson "Exposure of the OCG895i resist at the visible 413-nm Kr-ion line in a laser maskwriter", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262845

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