Process monitoring using surface charge profiling (SCP) method

Jerzy Ruzyllo; P. Roman; J. Staffa; Ismail Kashkoush; Emil Kamieniecki

doi:10.1117/12.250899

13 September 1996 Process monitoring using surface charge profiling (SCP) method

Jerzy Ruzyllo, P. Roman, J. Staffa, Ismail Kashkoush, Emil Kamieniecki

Proceedings Volume 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II; (1996) https://doi.org/10.1117/12.250899
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.

Citation Download Citation

Jerzy Ruzyllo, P. Roman, J. Staffa, Ismail Kashkoush, and Emil Kamieniecki "Process monitoring using surface charge profiling (SCP) method", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250899

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