Paper
13 September 1996 Comparison of the Ti/TiN/AlCu/TiN stack with TiN/AlCu/Ti/TiN stack for application in ULSI metallization
Satish S. Menon, Ratan K. Choudhury
Author Affiliations +
Abstract
The relative advantages and disadvantages of the two ULSI metallization stacks viz., Ti/TiN/AlCu/TiN and TiN/AlCu/Ti/TiN are described. The electromigration and thermal stability characteristics are compared using grain size of the Al metal, the XRD rocking curve peak and FWHM of the Al (111) orientation, SWEAT lifetime and electrical characteristics before and after thermal cycling of the test structures. In the literature, there exists work that report an improvement in the electromigration lifetime in the situation where Ti is in direct contact with Al due to the formation of TiAl3. The results for submicron dimensions presented in this paper clearly point to very important requirements for those results to hold and highlight the danger in assuming its validity for submicron lines. The W- plug via schemes resulting from use of both these metallization stacks will be compared from both the electrical and reliability standpoint. The conflict arising between the functionality and reliability of the vias with the reliability of the metallization lines is discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satish S. Menon and Ratan K. Choudhury "Comparison of the Ti/TiN/AlCu/TiN stack with TiN/AlCu/Ti/TiN stack for application in ULSI metallization", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250881
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Cited by 3 scholarly publications and 5 patents.
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KEYWORDS
Reliability

Metals

Tin

Aluminum

Titanium

Resistance

Statistical analysis

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