Spectroellipsometric characterization of SIMOX with a very thin Si layer

Tomuo Yamaguchi; Ahalapitiya Hewage Jayatissa; S. Tonooka; M. Aoyama; M. Tabe; Y. Kanda

doi:10.1117/12.246240

16 August 1996 Spectroellipsometric characterization of SIMOX with a very thin Si layer

Tomuo Yamaguchi, Ahalapitiya Hewage Jayatissa, S. Tonooka, M. Aoyama, M. Tabe, Y. Kanda

Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246240
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan

Abstract

Spectroellipsometric characterization of SIMOX (Si, Separated by IMplanted OXygen) with very thin top Si layer is presented. The measured spectra of (Psi) and (Delta) were analyzed with the model Air/SiO₂/top-Si/embedded SiO₂/c-Si, and are explained well by the use of the established table values of dielectric constants < (epsilon) > of Si and SiO₂ and taking account of the thickness fluctuation in the embedded SiO₂ layer with an appropriate thickness distribution function. Model dielectric functions are also applied to < (epsilon) > of the top Si layer to detect the size effect. It was found that the < (epsilon) > of top Si layer with thickness down to 4.3 nm is exactly the same as that of the single crystal silicon.

Citation Download Citation

Tomuo Yamaguchi, Ahalapitiya Hewage Jayatissa, S. Tonooka, M. Aoyama, M. Tabe, and Y. Kanda "Spectroellipsometric characterization of SIMOX with a very thin Si layer", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246240

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