Optical properties of ion-implanted laser-annealed Si studied by spectroscopic ellipsometry

Keiichiro Asai; Kenichi Watanabe; Toshiyuki Sameshima; Tadashi Saitoh; Yi-Ming Xiong

doi:10.1117/12.246235

16 August 1996 Optical properties of ion-implanted laser-annealed Si studied by spectroscopic ellipsometry

Keiichiro Asai, Kenichi Watanabe, Toshiyuki Sameshima, Tadashi Saitoh, Yi-Ming Xiong

Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246235
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan

Abstract

In this research, spectroscopic ellipsometry (SE) was used to study effects of heavy doping on the optical properties of n-type Si. The Si samples investigated were ion-implanted at 100 keV with phosphorus dose ranging from 6 X 10¹⁴ to 6 X 10¹⁶ cm^-2 and annealed using a KrF excimer laser in the nitrogen environment. SE measurements were carried out in room air, in the wavelength range from 250 to 850 nm. In the spectral analysis for each sample, a two-layer fitting model was used, in which the effects of the native oxide were included and the optical properties of ion-implanted laser-annealed Si were represented by a set of five Lorentz harmonic oscillators. Excellent agreement was obtained between the measured and calculated spectra, indicating that the model used was adequate and that the calculated results were reliable. Using the dielectric function data obtained from the model calculations, the E₁ and E₂ critical point (CP) energies were obtained by fitting the second derivative of the imaginary part of the measured dielectric function to a standard analytic lineshape, from which the doping-induced shift at the two CP's was determined.

Citation Download Citation

Keiichiro Asai, Kenichi Watanabe, Toshiyuki Sameshima, Tadashi Saitoh, and Yi-Ming Xiong "Optical properties of ion-implanted laser-annealed Si studied by spectroscopic ellipsometry", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246235

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available