Paper
16 August 1996 Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance
Cheong Chee Wong, Maho Mochizuki, Hiroyuki Yaguchi, Tadashi Saitoh, Yi-Ming Xiong
Author Affiliations +
Proceedings Volume 2873, International Symposium on Polarization Analysis and Applications to Device Technology; (1996) https://doi.org/10.1117/12.246226
Event: International Symposium on Polarization Analysis and Applications to Device Technology, 1996, Yokohama, Japan
Abstract
In this research, the structural and electronic properties of a modulation-doped n-AlxGa1-xAs/GaAs heterostructure was nondestructively studied using spectroscopic ellipsometry (SE) and photoreflectance (PR). Se was used to characterize the thickness and Al composition x of the AlxGa1-xAs layer for the given sample. On the other hand, PR was used to determine the surface built-in electric field strength and the bandgap energy of the AlxGa1-xAs layer. The results of our analysis show that SE and PR, being complementary to each other, are useful methods in characterizing the given sample.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheong Chee Wong, Maho Mochizuki, Hiroyuki Yaguchi, Tadashi Saitoh, and Yi-Ming Xiong "Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246226
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