PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
In this research, the structural and electronic properties of a modulation-doped n-AlxGa1-xAs/GaAs heterostructure was nondestructively studied using spectroscopic ellipsometry (SE) and photoreflectance (PR). Se was used to characterize the thickness and Al composition x of the AlxGa1-xAs layer for the given sample. On the other hand, PR was used to determine the surface built-in electric field strength and the bandgap energy of the AlxGa1-xAs layer. The results of our analysis show that SE and PR, being complementary to each other, are useful methods in characterizing the given sample.
Cheong Chee Wong,Maho Mochizuki,Hiroyuki Yaguchi,Tadashi Saitoh, andYi-Ming Xiong
"Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance", Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246226
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Cheong Chee Wong, Maho Mochizuki, Hiroyuki Yaguchi, Tadashi Saitoh, Yi-Ming Xiong, "Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance," Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); https://doi.org/10.1117/12.246226