Semiconductor diodes as neutron detectors for position-sensitive measurements and for application in personal neutron dosimetry

Michael Balzhaeuser; A. Dehoff; R. Engels; F. Hoengesberg; J. Lauter; Hans Luth; M. Reetz; Richard Reinartz; H. Richter; Jim Schelten; Th. Schmitz; A. Steffen; Th. Vockenberg

doi:10.1117/12.267916

27 February 1997 Semiconductor diodes as neutron detectors for position-sensitive measurements and for application in personal neutron dosimetry

Michael Balzhaeuser, A. Dehoff, R. Engels, F. Hoengesberg, J. Lauter, Hans Luth, M. Reetz, Richard Reinartz, H. Richter, Jim Schelten, Th. Schmitz, A. Steffen, Th. Vockenberg

Author Affiliations +

Proceedings Volume 2867, International Conference Neutrons in Research and Industry; (1997) https://doi.org/10.1117/12.267916
Event: Fifth International Conference on Applications of Nuclear Techniques: Neutrons in Research and Industry, 1996, Crete, Greece

Abstract

A new design for a position-sensitive detector system for thermal neutrons is introduced. The detection principle with a thin ⁶LiF converter on the surface of a semiconductor diode is described. In experiments with thermal neutrons, a spatial resolution of 1.25 mm was obtained. The detector is insensitive to (gamma) -rays with energies up to 1.5 MeV. The design of a detector with an improvement of the detection efficiency for thermal neutrons from 2.5 percent up to 35 percent is also proposed and the present state of the process development for its fabrication is described.

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Michael Balzhaeuser, A. Dehoff, R. Engels, F. Hoengesberg, J. Lauter, Hans Luth, M. Reetz, Richard Reinartz, H. Richter, Jim Schelten, Th. Schmitz, A. Steffen, and Th. Vockenberg "Semiconductor diodes as neutron detectors for position-sensitive measurements and for application in personal neutron dosimetry", Proc. SPIE 2867, International Conference Neutrons in Research and Industry, (27 February 1997); https://doi.org/10.1117/12.267916

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