Paper
18 December 1996 Q-band monolithic rf optical photoreceiver using InP-based PIN-HEMT MBE selective epitaxy
Richard Lai, Lawrence J. Lembo, Dennis Lo, Dwight C. Streit, Rosie Dia, Po-Hsin P. Liu, Fernando D. Alvarez, John C. Brock
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Abstract
We report an RF optical InP-based PIN-HEMT photoreceiver operating across a measured 36-46 GHz frequency band fabricated on the same wafer using selective area regrowth with molecular beam epitaxy. The photoreceiver design consists of a 20 micron circular InGaAs/InP photodiode integrated with a wide band 0.15 micron gate length InGaAs/InAlAs/InP low noise amplifier optimized for 44 GHz operation. The heterodyne technique of beating the frequency of two lasers was used to generate an RF modulated light signal at 1.3 micron wavelength. The output of the photoreceiver was measured on a spectrum analyzer and was found to be -24 to -27 dBm across a 36-46 GHz band.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Lai, Lawrence J. Lembo, Dennis Lo, Dwight C. Streit, Rosie Dia, Po-Hsin P. Liu, Fernando D. Alvarez, and John C. Brock "Q-band monolithic rf optical photoreceiver using InP-based PIN-HEMT MBE selective epitaxy", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262762
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KEYWORDS
Epitaxy

Heterodyning

Modulation

Molecular beam epitaxy

Optical amplifiers

Photodiodes

Semiconducting wafers

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