DC bias dependence of metal-insulator-metal diodes as generators of far-infrared radiation

Hitoshi Odashima; Keiji Kuroda; Fusakazu Matsushima; Shozo Tsunekawa; Kojiro Takagi

doi:10.1117/12.262769

18 December 1996 DC bias dependence of metal-insulator-metal diodes as generators of far-infrared radiation

Hitoshi Odashima, Keiji Kuroda, Fusakazu Matsushima, Shozo Tsunekawa, Kojiro Takagi

Proceedings Volume 2842, Millimeter and Submillimeter Waves and Applications III; (1996) https://doi.org/10.1117/12.262769
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Three kinds of metal-insulator-metal diodes, W-Ni, W-Co, and W-Fe diodes, have been used as mixer-generators of far-IR radiation. The dependencies of the generated far-IR power on the dc bias voltage applied to the didoes have been investigated. Observed bias dependencies can be predicted by analyzing their current-voltage characteristics.

Citation Download Citation

Hitoshi Odashima, Keiji Kuroda, Fusakazu Matsushima, Shozo Tsunekawa, and Kojiro Takagi "DC bias dependence of metal-insulator-metal diodes as generators of far-infrared radiation", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); https://doi.org/10.1117/12.262769

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