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The LBIC method was used to investigate the trapping-recombination centers in GaAs:Si layers grown by MOCVD method. The special test structure was developed and performed. The model which joins the measured signal changes with the presence of trapping centers from substrate (EL2 deep levels) and surface.
Bogdan Paszkiewicz,A. Romanowski,Regina Paszkiewicz,Marek Panek,Marek J. Tlaczala, andPrzemyslaw Andrzejewski
"LBIC investigation of the dynamic behavior of trapping-recombination centers", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238144
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Bogdan Paszkiewicz, A. Romanowski, Regina Paszkiewicz, Marek Panek, Marek J. Tlaczala, Przemyslaw Andrzejewski, "LBIC investigation of the dynamic behavior of trapping-recombination centers," Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238144