Low-temperature silicon amorphous and crystalline film formation by laser chemical vapor deposition

A. U. Dar'jushkin; N. L. Kondratiev; S. B. Korovin; A. N. Orlov; Alexander M. Prokhorov; Vladimir I. Pustovoy; J. I. Ulitina

doi:10.1117/12.232216

11 March 1996 Low-temperature silicon amorphous and crystalline film formation by laser chemical vapor deposition

A. U. Dar'jushkin, N. L. Kondratiev, S. B. Korovin, A. N. Orlov, Alexander M. Prokhorov, Vladimir I. Pustovoy, J. I. Ulitina

Author Affiliations +

Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232216
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic

Abstract

Laser chemical vapor deposition (LCVD) method was used for silicon films formation. Results on Raman scattering and x-ray induced photoelectron spectroscopy (XPS) of these polycrystalline and amorphous films are presented. The same LCVD methods for the case of quasi-resonant molecules were studied too. Theoretical criteria for nonthermal and thermal reactions in laser fields are given. The frequency dependence of laser chemical reaction ignition threshold was experimentally registered for the silicon tetrafluoride decomposition reaction in carbon-dioxide-laser field. It was proved that the laser radiation intensity needed for maintaining the reaction is substantially lower than the threshold ignition intensity.

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A. U. Dar'jushkin, N. L. Kondratiev, S. B. Korovin, A. N. Orlov, Alexander M. Prokhorov, Vladimir I. Pustovoy, and J. I. Ulitina "Low-temperature silicon amorphous and crystalline film formation by laser chemical vapor deposition", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); https://doi.org/10.1117/12.232216

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