Paper
11 March 1996 Active media for up-conversion diode-pumped lasers
Alexandra M. Tkachuk
Author Affiliations +
Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232218
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic
Abstract
In this work, we consider the different methods of populating the initial and final working levels of laser transitions in TR-doped crystals under the selective 'up-conversion' and 'avalanche' diode laser pumping. On the basis of estimates of the probabilities of competing non-radiative energy-transfer processes rates obtained from the experimental data and theoretical calculations, we estimated the efficiency of the up-conversion pumping and selfquenching of the upper TR3+ states excited by laser-diode emission. The effect of the host composition, dopant concentration, and temperature on the output characteristics and up-conversion processes in YLF:Er; BaY2F8:Er; BaY2F8:Er,Yb and BaY2F8:Yb,Ho are determined.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra M. Tkachuk "Active media for up-conversion diode-pumped lasers", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); https://doi.org/10.1117/12.232218
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KEYWORDS
Crystals

Erbium

Holmium

Semiconductor lasers

Energy transfer

Ions

Laser crystals

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