3D simulation of thin film growth conditions at ion beam sputter deposition and comparison to experimental investigations

Markus Tilsch; Volker Scheuer; Jochen Biersack; Theo T. Tschudi

doi:10.1117/12.246794

19 August 1996 3D simulation of thin film growth conditions at ion beam sputter deposition and comparison to experimental investigations

Markus Tilsch, Volker Scheuer, Jochen Biersack, Theo T. Tschudi

Author Affiliations +

Proceedings Volume 2775, Specification, Production, and Testing of Optical Components and Systems; (1996) https://doi.org/10.1117/12.246794
Event: Optical Instrumentation and Systems Design, 1996, Glasgow, United Kingdom

Abstract

A software tool for the simulation of ion beam sputter deposition is presented. All calculations are performed in 3D space using the original deposition chamber geometry. Starting at the extraction grid of the ion gun the distribution of the ion beam at the target is determined. A special version of transport of ions in matter code is applied to simulate the sputtering process. Using the energy and angular distribution of all sputtered and reflected atoms, the energy deposition as well as growth rates and particle compositions at any location and orientation in the deposition chamber can be calculated. Some experimental results of growth rates and optical absorption losses of SiO₂ and TiO₂ layers are presented and are compared to the results of simulation.

Citation Download Citation

Markus Tilsch, Volker Scheuer, Jochen Biersack, and Theo T. Tschudi "3D simulation of thin film growth conditions at ion beam sputter deposition and comparison to experimental investigations", Proc. SPIE 2775, Specification, Production, and Testing of Optical Components and Systems, (19 August 1996); https://doi.org/10.1117/12.246794

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