Tm:Y2SiO5 and Tm:SrY4(SiO4)3O microchip lasers

Philippe Thony; Corinne Borel; Roselyne Templier

doi:10.1117/12.238116

11 April 1996 Tm:Y₂SiO₅ and Tm:SrY₄(SiO₄)₃O microchip lasers

Philippe Thony, Corinne Borel, Roselyne Templier

Proceedings Volume 2772, Laser Optics '95: Solid State Lasers; (1996) https://doi.org/10.1117/12.238116
Event: Laser Optics '95, 1995, St. Petersburg, Russian Federation

Abstract

Laser operation in the 2 micrometers -wavelength range is reported. Two different crystals are studied: Y₂SiO₅ and SrY₄(SiO₄)₃O doped with 5% thulium. Microchip lasers with flat/flat monolithic cavity are operated at room temperature, with Ti:Sapphire laser pumping. Threshold as low as 130 mw of incident pump power and slope efficiency as high as 46% were obtained. The emission spectrum of such microchip lasers appears to be very wide (20 to 30 nm). Laser experiments with laser diode pumping are also reported.

Citation Download Citation

Philippe Thony, Corinne Borel, and Roselyne Templier "Tm:Y₂SiO₅ and Tm:SrY₄(SiO₄)₃O microchip lasers", Proc. SPIE 2772, Laser Optics '95: Solid State Lasers, (11 April 1996); https://doi.org/10.1117/12.238116

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